lvo W. Rangelow received the M.S. and Ph.D. degrees in electronics from the Universityof Wroclaw, in 1979 and 1983, respectively. From 1983 to 1984, he was with the Universityof Muenster, where his research focused on the development of ion and electron beam tech-niques. In 1985, he joined the Fraunhofer-Institute, Berlin, where he was involved in X-rayithography, In 1986, he joined the University of Kassel, where he focused on the develon.ment of small cantilever sensors, microresonators, diverse MEMS, and novel gas-choppinctechniques for plasma etching of silicon for high aspect ratio devices. In 2005, he joined thelmenau University of Technoloay and his actual works are focused on sub-10 nm scannincprobe-based lithography. He was a Guest Professor with the University of Vienna, WroclawUniversity, and the University of Berkeley. He is currently the Director of the Institute ofMicro- and Nanoelectronics with the llmenau University of Technology.
：Active parallel probe technology, because of its atomic precision, integrabilityand high Throughput, has become the frontier technology of micro and nano manu.facturing industry, This report starts with the characteristics of active probe tech.nology as the underlying technology, and focuses on the progress and futureprospects of active parallel probe technology in surface measurement, probelithography, high sensitivity sensor and other technical application scenarios, aswell as the fabrication of probe array MEMS.
